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|a Point defects in semiconductors /
|c M. Lannoo, J. Bourgoin.
|
260 |
# |
# |
|a Berlin :
|b Springer,
|c 1983.
|
300 |
# |
# |
|b il. ;
|c 24 cm.
|
504 |
# |
# |
|a Incluye referencias bibliográficas e índice.
|
505 |
0 |
# |
|a v. 2. Experimental aspects.
|
490 |
0 |
# |
|a Springer series in solid-state sciences ;
|v 22, 35
|
020 |
# |
# |
|a 0387115153 (U.S. : v. 2)
|
100 |
1 |
# |
|a Lannoo, M.
|q (Michel),
|d 1942-
|
700 |
1 |
# |
|a Bourgoin, J.
|q (Jacques),
|d 1938-
|
080 |
# |
# |
|a 537.3
|
650 |
# |
0 |
|a Semiconductors
|x Defects.
|
650 |
# |
0 |
|a Point defects.
|
650 |
# |
7 |
|a Dispositivos semiconductores.
|2 inist
|
650 |
# |
7 |
|a Defectos puntuales.
|2 inist
|
040 |
# |
# |
|a DLC
|c DLC
|d DLC
|b spa
|d arbccab
|
500 |
# |
# |
|a Vol. 2 by J. Bourgoin, M. Lannoo, with a foreword by G.D. Watkins.
|
942 |
# |
# |
|c BK
|
952 |
# |
# |
|2 udc
|a ARBCCAB
|b ARBCCAB
|i 11773
|o 537.3 B66 Vol.2
|p 11773
|t 1
|y BK
|