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00854cam#a22002531a#4500 |
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740605s1967####nyua#####b####000#0#eng## |
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20120116150928.0 |
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AR-BCCAB |
| 245 |
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|a Characteristics and operation of MOS field-effect devices /
|c Paul Richman.
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| 260 |
# |
# |
|a New York :
|b McGraw-Hill,
|c [1967]
|
| 300 |
# |
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|a x, 150 p. :
|b il. ;
|c 23 cm.
|
| 504 |
# |
# |
|a Incluye referencias bibliográficas.
|
| 100 |
1 |
# |
|a Richman, Paul,
|d 1942-
|
| 080 |
# |
# |
|a 621.382.3
|
| 650 |
# |
0 |
|a Field-effect transistors.
|
| 650 |
# |
0 |
|a Metal oxide semiconductors.
|
| 650 |
# |
7 |
|a Transistores de efecto de campo.
|2 inist
|
| 650 |
# |
7 |
|a Celulas solares MOS.
|2 inist
|
| 650 |
# |
7 |
|a Dispositivos semiconductores.
|2 inist
|
| 040 |
# |
# |
|a DLC
|c DLC
|d DLC
|b spa
|d arbccab
|
| 082 |
0 |
0 |
|a 621.381/528
|
| 942 |
# |
# |
|c BK
|
| 952 |
# |
# |
|2 udc
|a ARBCCAB
|b ARBCCAB
|i 405
|o 621.382.3 R411
|p 405
|t 1
|y BK
|
