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01571ntm#a22003855a#4500 |
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071023s1989####gw#ad##f#bm###001#0#ger#d |
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20090129153823.0 |
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TSRCCAB014379 |
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|a Druckabhängigkeit der elektronischen Bandstruktur und der optischen Egenschaften von Ge, GaAs und GaxIn1-xP /
|c Alejandro R. Goñi.
|
| 260 |
# |
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|c 1989.
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| 300 |
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|a 185 p. :
|b il., gráficos ;
|c 30 cm.
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| 502 |
# |
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|a Tesis (doctorado)--Universität Stuttgart zur Erlangung. Fakultät Physik, 1989.
|
| 504 |
# |
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|a Bibliografía: p. 174-183.
|b 218.
|
| 100 |
1 |
# |
|a Goñi, Alejandro R.
|4 dis
|
| 710 |
2 |
# |
|a Universität Stuttgart zur Erlangung.
|b Fakultät Physik
|4 dgg.
|
| 710 |
2 |
# |
|a Max-Planck-Institut für Ferstkörperfschung.
|
| 650 |
# |
7 |
|a Semiconductors materials
|v Theses.
|2 inist
|
| 650 |
# |
7 |
|a Germanium
|v Theses.
|2 inist
|
| 650 |
# |
7 |
|a Gallium arsenides
|v Theses.
|2 inist
|
| 650 |
# |
7 |
|a Optical properties
|v Theses.
|2 inist
|
| 650 |
# |
7 |
|a Pressure dependence
|v Theses.
|2 inist
|
| 650 |
# |
7 |
|a Materiales semiconductores
|v Tesis.
|2 inist
|
| 650 |
# |
7 |
|a Germanio
|v Tesis.
|2 inist
|
| 650 |
# |
7 |
|a Arseniuros de galio
|v Tesis.
|2 inist
|
| 650 |
# |
7 |
|a Propiedades ópticas
|v Tesis.
|2 inist
|
| 650 |
# |
7 |
|a Influencia de la presión
|v Tesis.
|2 inist
|
| 080 |
# |
# |
|a 537.3
|x [043]
|
| 700 |
1 |
# |
|a Cardona, M.
|4 ths
|
| 700 |
1 |
# |
|a Umbach, E.
|4 ths
|
| 040 |
# |
# |
|a arbccab
|b spa
|
| 500 |
# |
# |
|a Directores de tesis: M. Cardona y E. Umbach.
|
| 500 |
# |
# |
|a "Max-Planck-Institut für Ferstkörperfschung".
|
| 942 |
# |
# |
|c TS
|
| 952 |
# |
# |
|2 udc
|a ARBCCAB
|b ARBCCAB
|i 13013
|o 537.3[043] G589
|p 13013
|t 1
|y TS
|
